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• W2154863670 abstract "We report on the device fabrication and measured performance of p-i-n photodiodes made from wafer-bonded InGaAs-on-Si material. Dark currents below 38 pA and 3-dB bandwidths above 11 GHz were measured for a -4-V bias and for an active area diameter of 20 μm. The thermal conductivity of silicon enables a 200-MHz 1-dB compression current of 76.5 mA, measured on nonoptimized test devices. These devices dissipate upwards of 612 mW of electrical power. High-yield wafer-scale fabrication of InGaAs-on-Si p-i-n photodetectors is demonstrated." @default.
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• W2154863670 date "2004-11-01" @default.
• W2154863670 modified "2023-10-16" @default.
• W2154863670 title "Infrared-Sensitive InGaAs-on-Si p-i-n Photodetectors Exhibiting High-Power Linearity" @default.
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• W2154863670 doi "https://doi.org/10.1109/lpt.2004.835215" @default.
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