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- W2154944942 abstract "This paper presents a detailed analysis and precise modeling of multiple-energy Al implantations necessary for boxlike profiles in the p <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> -region of 4H-SiC power devices. To demonstrate the balance between scatter-in channeling and amorphization-suppressed channeling, a thin-surface SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> layer is formed on 4H-SiC substrates misoriented by 8deg from (0001) toward [112 macr0]. Experimental, as well as Monte-Carlo-simulated, as-implanted concentration profiles of Al normally incident to the surface suggest that the least ion channeling is realized for implantations without SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> in a decreasing energy order. To understand this mechanism, concentration profiles of Al implantations at a single energy with and without SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> are modeled using the dual-Pearson approach. Based on the developed model, the Al ion channeling in 4H-SiC is discussed in terms of effects of surface SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> layers and the sequence of multiple-energy implantations." @default.
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- W2154944942 date "2008-08-01" @default.
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- W2154944942 title "Detailed Analysis and Precise Modeling of Multiple-Energy Al Implantations Through $hbox{SiO}_{2}$ Layers Into 4H-SiC" @default.
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- W2154944942 doi "https://doi.org/10.1109/ted.2008.926631" @default.
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