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- W2154959547 abstract "This paper is for the simulation design to enhance the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess and channel structures has been simulated and analyzed for the breakdown of the MHEMT devices. The fully removed recess structure at the drain side of MHEMT shows that the breakdown voltage enhances from 2 V to almost 4 V as the saturation current at gate voltage of 0 V is reduced from 90 mA to 60 mA at drain voltage of 2 V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier and the passivation layers deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer and thus the impact ionization in the channel become smaller. In addition, the replaced InGaAs/InP composite channel with the same thickness in the same asymmetrically recessed structure increases the breakdown voltage to 5 V due to the smaller impact ionization and mobility of the InP layer at high drain voltage." @default.
- W2154959547 created "2016-06-24" @default.
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- W2154959547 date "2013-11-30" @default.
- W2154959547 modified "2023-09-24" @default.
- W2154959547 title "Simulation Design of MHEMT Power Devices with High Breakdown Voltages" @default.
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- W2154959547 doi "https://doi.org/10.5757/jkvs.2013.22.6.335" @default.
- W2154959547 hasPublicationYear "2013" @default.
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