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• W2154961796 abstract "Recently, InGaN/GaN quantum wells with different nanostructures such as nanoholes and nanorods have been proposed to enhance the light emitting efficiency. This paper calculates the influence of nanostructures to the strain and band profile of the quantum well. The effects of strain relaxation and surface states are analyzed, which could possibly influence the diode emission properties. Our calculation results show that the strain relaxation and the surface state pinning play important roles in enhancing the light emission, reducing the quantum confined Stark effect, and causing the blue shift of the spectrum. Our calculation results provide useful information in analyzing emission properties of nanohole arrays and similar structures." @default.
• W2154961796 created "2016-06-24" @default.
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• W2154961796 date "2010-06-01" @default.
• W2154961796 modified "2023-09-26" @default.
• W2154961796 title "Study of Light Emission Enhancement in Nanostructured InGaN/GaN Quantum Wells" @default.
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• W2154961796 doi "https://doi.org/10.1109/jqe.2010.2040515" @default.
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