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• W2155202110 abstract "Quantum confinement of carriers has a substantial impact on nanoscale device operations. We present electrical transport analysis for lithographically fabricated sub-5 nm thick Si nanowire field-effect transistors and show that confinement-induced quantum oscillations prevail at 300 K. Our results discern the basis of recent observations of performance enhancement in ultrathin Si nanowire field-effect transistors and provide direct experimental evidence for theoretical predictions of enhanced carrier mobility in strongly confined nanowire devices." @default.
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• W2155202110 date "2011-11-29" @default.
• W2155202110 modified "2023-10-18" @default.
• W2155202110 title "Room-Temperature Quantum Confinement Effects in Transport Properties of Ultrathin Si Nanowire Field-Effect Transistors" @default.
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• W2155202110 doi "https://doi.org/10.1021/nl203238e" @default.
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