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- W2155221569 abstract "Process variations such as post etch cleaning, pre-cleaning prior to Cu barrier/seed deposition and Cu annealing can yield significant differences in electromigration (EM) failure populations even while maintaining general microstructure consistency. In this paper, focus-ion-beam (FIB) cross-sectional imaging is used to reveal how bimodal EM failures originate. In addition, a novel integrated scheme with an optimized post etch clean after nitride breakthrough, in-situ H/sub 2/ contained precursor treatment prior to Cu barrier/seed deposition and an optimized Cu anneal condition is introduced to improve the electrical and eliminate the bimodal EM failures of Cu interconnects." @default.
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- W2155221569 date "2004-03-02" @default.
- W2155221569 modified "2023-09-25" @default.
- W2155221569 title "A novel integrated scheme to improve the electrical and electromigration performance of Cu interconnects" @default.
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- W2155221569 doi "https://doi.org/10.1109/ipfa.2003.1222751" @default.
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