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• W2155251861 abstract "Owing to the unique properties of nitride material system (binary and ternary alloys of In, Al, and Ga with N) like bandgap spanning the whole solar spectrum (InN = 0.7 eV, AlN = 6.2 eV), high saturation velocity, and high breakdown electric field, nanostructures and nanodevices made from Gallium Nitride and related materials have great potential to be the used for realizing next generation of efficient nanoscale UV/visible light emitters, detectors, and high temperature electronic devices. Developing integrated devices and systems from these nanowires would yield more efficient sensors, light emitters, detectors, and ultrahigh density data storage systems. Nanostructures are also a great vehicle for studying fundamental transport properties in mesoscopic material systems. Although, few results of individual GaN nanowire devices has been reported so far (1)-(2), but most of these often involve fabrication processes unsuitable for large scale nanosystems development. True potentials of these nanostructures will be realized only through large scale self assembling technique which will eliminate the need for individual nanowire manipulation. In this work we have demonstrated nanoscale GaN device structures made from GaN nanowires utilizing both conventional optical lithography and electric field assisted aligning to achieve large scale functional nanowire networks. The GaN nanowires were grown by direct reaction of Ga and NH3 and had diameters ranging from 100 nm to 250 nm and lengths up to 200 µm. A conventional furnace results in a growth matrix which is collected from the growth chamber. This matrix contains single crystal GaN nanowires and platelets as shown in Fig. 1. After the growth, the growth matrix is sonicated in Isopropanol. The solution is then dispersed on to a prepatterned SiO2 coated Si substrates with Ti/Al/Ti pads already fabricated on them. Square waves of varying peak to peak voltage and frequency was applied during the dispersion. After the solvent dries out it was observed that these nanowires align themselves in response to the electric field following the field lines between the two metal pads. It was also noted that the degree of alignment is dependent on the frequency and peak to peak voltage of the ac signal applied. It was observed that the nanowires align best at 1 KHz as shown in Fig. 2 (a)-(b). After alignment, the sample is annealed at 750 °C for 30 sec in UHP argon. This ensures the contact pads react with the nanowires forming mechanically stable ohmic contacts. I-V characteristics of the aligned nanowires are measured using the prepatterned pads and shown in Fig. 3. This eliminates the need for further processing and results in a functional network which can be used for applications like sensors and light emitting arrays. We have also assembled nanowires of different material system like GaN and InN on the same substrate to give rise to hybrid integration." @default.
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• W2155251861 date "2006-03-10" @default.
• W2155251861 modified "2023-09-25" @default.
• W2155251861 title "Large Scale Assembly of GaN Nanowires Using Electric Field Assisted Alignment Techniques for Device Applications" @default.
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• W2155251861 doi "https://doi.org/10.1109/isdrs.2005.1596132" @default.
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