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• W2155357239 abstract "We discuss some features of strained-layer superlattices built from III–V direct gap semiconductors. First, the effects of built-in strains on the optical properties of two examples of moderately strained structures, InxGa1−xAsGaAs and InyAl1−yAsGaAs on GaAs substrates are described. We report, in a second part, experimental data obtained on samples containing highly strained layers. In narrow InAs quantum wells in GaAs, the interface broadening due to indium segregation and InAs film roughness is shown to influence strongly the variations of the optical transitions energies with the well thickness. Finally, we present structural and optical data on (InAs)m(GaAs)n short period superlattices grown by Migration Enhanced Epitaxy on InP substrate. We show from Raman scattering and optical spectra as well as X-ray diffraction profiles that high quality material (either in thick layers or used in multi Quantum Well structures) can be obtained using this technique." @default.
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• W2155357239 date "1989-01-01" @default.
• W2155357239 modified "2023-10-16" @default.
• W2155357239 title "Optical properties of some III–V strained-layer superlattices" @default.
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• W2155357239 doi "https://doi.org/10.1016/0749-6036(89)90067-0" @default.
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