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- W2155439220 abstract "The effect of Additional Low Temperature RTA process (ALTRTA) prior to furnace annealing (FA) on shallow junction formation has been investigated. In p/sup +/-n junction implanted by BF/sub 2/ at 20 keV with a dose of 3/spl times/10/sup 15/ ions/cm/sup 2/, it was found that ALTRTA at 950/spl deg/C for 5 sec before FA at 850/spl deg/C for 60 min decreased the junction depth, sheet resistance and junction leakage current by 10%, 2%, and 83.7%, respectively compared to conventional FA process. As FA time increased, the retardation of boron diffusion by ALTRTA was more prominent. Cross-sectional TEM study showed that the density and size of dislocation in ALTRTA sample were reduced. Therefore, it is speculated that the density reduction of Si-interstitial due to point defect recombination (Interstitial+Vacancy=0) during ALTRTA retards the boron diffusion, and reduces junction leakage current. The effective ALTRTA condition was found to depend on ion implantation energy and/or dose, and the lower ion implantation energy and/or dose required the lower RTA temperature. From the results, the ALTRTA process prior to FA for BPSG flow is very effective for the formation of ultra-shallow junction with the improvement of junction characteristics." @default.
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- W2155439220 date "2002-12-24" @default.
- W2155439220 modified "2023-09-23" @default.
- W2155439220 title "Effect of additional low temperature RTA on ultra-shallow p/sup +/-n junction formation" @default.
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- W2155439220 doi "https://doi.org/10.1109/iit.1996.586482" @default.
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