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• W2155822036 abstract "Homogeneous silicon boron oxycarbide (Si-B-O-C) glasses based on SiOxC4–x and BOyC3–y mixed environments were obtained by pyrolysis under inert atmosphere of sol–gel-derived precursors. Their high-temperature structural evolution from 1000° to 1500°C was followed using XRD, 29Si and 11B MAS NMR, and chemical analysis and compared with the behavior of the parent boron-free Si-O-C glasses. The XRD study revealed that, for the Si-O-C and the Si-B-O-C systems, high-temperature annealing led to the crystallization of nanosized β-SiC into an amorphous SiO2-based matrix. NMR analysis suggested that the β-SiC crystallization occurred with a consumption of the mixed silicon and boron oxycarbide units. Finally, by comparing the behavior of the Si-O-C and Si-B-O-C glasses, it was shown that the presence of boron increased the crystallization kinetics of β-SiC." @default.
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• W2155822036 date "2004-02-01" @default.
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• W2155822036 title "Crystallization Behavior of Novel Silicon Boron Oxycarbide Glasses" @default.
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• W2155822036 doi "https://doi.org/10.1111/j.1551-2916.2004.00203.x" @default.
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