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• W2156092011 abstract "RF performances of 100-nm metal gate/high-k dielectric nMOSFET and parameters degradation by hot carrier injection to apply to RF integrated circuits are investigated. The attained nMOSFETs RF performances are 132-GHz f T and 44-GHz f max . In addition to RF figures of merit (FOM, f T and f max ), variation of capacitance and resistance is monitored to study hot carrier effects." @default.
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• W2156092011 date "2009-09-01" @default.
• W2156092011 modified "2023-10-18" @default.
• W2156092011 title "RF performance degradation in 100-nm metal gate/high-k dielectric nMOSFET by hot carrier effects" @default.
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• W2156092011 doi "https://doi.org/10.1109/essderc.2009.5331402" @default.
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