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- W2156475498 abstract "We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlInAs/GaInAs/InP HEMT's. These results are believed to be the highest frequency three-terminal oscillators reported to date. The indium concentration in the channel was 80% for high sheet charge and mobility. The HEMT gates were fabricated with self-aligned sub-tenth-micrometer electron-beam techniques to achieve gate lengths on the order of 50 nm and drain-source spacing of 0.25 /spl mu/m. Planar antennas were integrated into the fabrication process resulting in a compact and efficient quasioptical Monolithic Millimeter-wave Integrated Circuit (MMIC) oscillator.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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- W2156475498 date "1995-04-01" @default.
- W2156475498 modified "2023-09-27" @default.
- W2156475498 title "155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators" @default.
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- W2156475498 doi "https://doi.org/10.1109/22.375256" @default.
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