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- W2156588894 abstract "ABSTRACT Recent progress in FET (field-effect transistor)-type ferroelectric random access memories is reviewed. Effectiveness of a HfO2 buffer layer, which is inserted between a ferroelectric film and Si substrate for preventing interdiffusion of constituent elements, is first described. It is shown in the FET with Pt/SrBi2Ta2O9/HfO2/Si gate structure that the drain current on/off ratio is larger than 103 even after 30 days have elapsed. Then, the operation principle of a 1T2C-type memory cell, in which two ferroelectric capacitors with the same area are connected to the gate of a MOSFET, is discussed and basic characteristics of a 1 kbit array composed of 1T2C-type cells are presented." @default.
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- W2156588894 date "2006-11-01" @default.
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- W2156588894 title "APPLICATIONS OF BISMUTH-LAYERED PEROVSKITE THIN FILMS TO FET-TYPE FERROELECTRIC MEMORIES" @default.
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