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• W2156814947 abstract "We developed a real-time in-situ X-ray (RIX) diffraction technique for the detailed layer characterisation during epitaxial deposition of ZnSe-based alloys on (001)GaAs substrates. A conventional molecular beam epitaxy chamber was equipped with a Cu X-ray tube. The 113 reflection of the deposited structure is detected in static geometry by a CCD and is immediately analyzed in terms of strain, composition, thickness and strain relaxation behavior of the deposited layer. The in-situ monitoring of ZnCdSe layers reveals a delay of heteroepitaxial growth start on GaAs, a gradual layer degradation due to dislocation formation, and a critical thickness for plastic relaxation which depends on the Cd content, consistent with an energy-balance model. ZnCrSe alloy layers can be deposited with Cr content up to 2% at low substrate temperature TS = 210 °C. The layers appear to be epitaxial alloys with good quality, but a broadening of the Bragg peaks without a significant plastic relaxation is observed. Epitaxial growth and layer properties are studied as function of deposition conditions. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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• W2156814947 date "2007-09-01" @default.
• W2156814947 modified "2023-10-17" @default.
• W2156814947 title "In-situ X-ray diffraction during epitaxial growth of ZnSe-based heterostructures on (001)GaAs" @default.
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• W2156814947 doi "https://doi.org/10.1002/pssc.200775406" @default.
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