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• W2156860995 startingPage "1440" @default.
• W2156860995 abstract "The distributions of ion energies incident on the wafer significantly influence feature profiles and selectivity during plasma etching. Control of ion energies is typically obtained by varying the amplitude or frequency of a radio frequency sinusoidal bias voltage applied to the substrate. The resulting ion energy distribution (IED), though, is generally broad. Controlling the width and shape of the IED can potentially improve etch selectivity by distinguishing between threshold energies of surface processes. In this article, control of the IED was computationally investigated by applying a tailored, nonsinusoidal bias waveform to the substrate of an inductively coupled plasma. The waveform we investigated, a quasi-dc negative bias having a short positive pulse each cycle, produced a narrow IED whose width was controllable based on the length of the positive spike and frequency. We found that the selectivity between etching Si and SiO2 in fluorocarbon plasmas could be controlled by adjusting the width and energy of the IED. Control of the energy of a narrow IED enables etching recipes that transition between speed and selectivity without change of gas mixture." @default.
• W2156860995 created "2016-06-24" @default.
• W2156860995 creator A5009306289 @default.
• W2156860995 creator A5050594304 @default.
• W2156860995 date "2005-08-16" @default.
• W2156860995 modified "2023-09-23" @default.
• W2156860995 title "Effect of nonsinusoidal bias waveforms on ion energy distributions and fluorocarbon plasma etch selectivity" @default.
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• W2156860995 doi "https://doi.org/10.1116/1.2013318" @default.
• W2156860995 hasPublicationYear "2005" @default.
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