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- W2156869281 abstract "Abstract This study reports on the reduction of dislocations in the GaN grown on the stripe-patterned r-plane sapphire substrates via metal-organic chemical vapor deposition (MOCVD). The stripes oriented along the sapphire [1 1 2¯ 0] direction with asymmetrical side faces were fabricated by lithographic and wet-etching processes. The two etching sides of sapphire-striped mesa are {0 0 0 1} and {1 1¯ 0 1} faces. GaN grown on both etching facets exhibits different epitaxial relationships with the sapphire substrate. The GaN grown from the {0 0 0 1} side face of the sapphire mesa contains a low-dislocation density in the order of 107 cm−2. The interfacial regions between the GaN and patterned sapphire substrate are also studied to clarify the behavior of GaN epitaxial growth on the inclined sapphire faces and defect-reduction mechanism." @default.
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- W2156869281 date "2008-04-01" @default.
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- W2156869281 title "Investigation on microstructure in GaN epitaxial growth on the stripe-patterned r-plane sapphire substrates" @default.
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- W2156869281 doi "https://doi.org/10.1016/j.jcrysgro.2007.11.178" @default.
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