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• W2157084433 abstract "This paper presents a study of the ionizing radiation tolerance of static, signal and noise characteristics of 0.13 /spl mu/m CMOS transistors, in the context of designing rad-hard analog integrated circuits. Device parameters were monitored before and after irradiation with /sup 60/Co /spl gamma/-rays at a 10 Mrad (SiO/sub 2/) total ionizing dose. The effects on key parameters such as threshold voltage shift and 1/f noise are studied and compared with the behavior under irradiation of devices in previous CMOS generations." @default.
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• W2157084433 date "2005-11-15" @default.
• W2157084433 modified "2023-09-24" @default.
• W2157084433 title "Total ionizing dose effects on the analog performance of a 0.13&#x03BC;m CMOS technology" @default.
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• W2157084433 doi "https://doi.org/10.1109/redw.2005.1532677" @default.
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