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- W2157898981 abstract "Photoresist containing Si, which works as a positive resist, was developed. The photoresist consists of an ortho‐nitrobenzylether group and silyl moiety. Six polymers were newly synthesized and characterized. Quantum yields for model compounds of these polymers were around 0.2 and varied, depending on the ortho‐nitrobenzylether structure. After exposure, the photoresist was developed with tetramethylammonium hydroxide solution in alcohol or in alcohol. Sensitivity depended on the structure of the polymers, prebake temperature, and developers. reactive ion etching durabilities for these polymers were about five to ten times greater than conventional cresol novolak resin resist." @default.
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- W2157898981 date "1987-09-01" @default.
- W2157898981 modified "2023-10-05" @default.
- W2157898981 title "Deep UV Photoresist Containing Ortho‐Nitrobenzylsilylether Structure in the Main Chain" @default.
- W2157898981 doi "https://doi.org/10.1149/1.2100870" @default.
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