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• W2157922084 abstract "This paper describes a recently developed 16-Mb toggle magnetic random access memory (MRAM). It has 100-MHz burst modes that are compatible with a pseudo-SRAM even though the toggle cell requires reading and comparing sequences in write modes. To accelerate operating clock frequency, we propose a distributed-driver wide-swing current-mirror scheme, an interleaved and pipelined memory-array group activation scheme, and a noise-insulation switch scheme. These circuit schemes compensate the toggle cell timing overhead in write modes and maintain write-current precision that is essential for the wide operational margin of MRAMs. Because toggle cells are very resistant to write disturbance errors, we designed the 16-Mb MRAM to include a toggle MRAM cell. The MRAM was fabricated with 0.13-mum CMOS and 0.24-mum MRAM processes with five metal layers." @default.
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• W2157922084 date "2007-11-01" @default.
• W2157922084 modified "2023-10-15" @default.
• W2157922084 title "A 16-Mb Toggle MRAM With Burst Modes" @default.
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• W2157922084 doi "https://doi.org/10.1109/jssc.2007.906195" @default.
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