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- W2157966457 abstract "An alternative I~o.~G~o.~As/L~o .~~A~o.~~As hetero- structure based on GaAs is proposed, which provides a large conduction-band discontinuity for a better carrier confinement, resulting in a high-carrier density. This unstrained high-In channel achieved a better device performance, as compared with the conventional pseudomorphic channel, which is always limited by the critical thickness. This unstrained channel is also proven to be more stable after a long-term biased-stress. I. INTRODUCTION aAs/Al,Gal-,As HFET's have emerged as leading de- vices for high-frequency and low-noise applications. To further improve the performance of GaAs-based devices, a pseudomorphic In,Gal -,As channel is always recommended in this heterostructure system (lj, (2). Based on our previous investigation, a systematic increase in electron density and mobility was found by the increase of In content in the channel, which also corresponded to the device performance improvement in doped-channel AIGaAs/In,Gal-,As FET's (2). However, this pseudomorphic approach is limited to the x value up to 0.2 to prevent the generation of misfit dislocation, which degrades the device performance. An alternative way to break this critical thickness limitation and further increase the In content in the channel is to use mismatched strain-relaxed metamorphic buffers (3 j-(S j. An fmax of 350 GHz was obtained from a gate-length of 0.13 pm HEMT, where an In0.52Gao.48As channel was used on GaAs substrates. Based on this metamorphic buffer design, a feasibility of unstrained In0.~Ga0.~As/In0.29Alo 71As HEMT's grown on GaAs substrate can be realized. This heterostructure provides not only a high-In content in the channel, but also a higher bandgap of In0.29A10.71As and a larger conduction-band discontinuity, which are all beneficial for device operation. In this study, we applied this metamorphic concept to doped- channel FET's (DCFET's) and characterized the performance. In addition, performance comparisons from various In con- tent of pseudomorphic DCFET's were also included. The maximum In composition in pseudomorphic approach was x = 0.25, and the x was 0.3 for the metamorphic design." @default.
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- W2157966457 date "1996-01-01" @default.
- W2157966457 modified "2023-10-18" @default.
- W2157966457 title "Enhanced Device Performance by Uns trained Ino. 3 Gao.;lAs/Ino. 29A10 J 1 As oped-Channel FET on GaAs Substrates" @default.
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