Matches in SemOpenAlex for { <https://semopenalex.org/work/W2158012362> ?p ?o ?g. }
- W2158012362 endingPage "1831" @default.
- W2158012362 startingPage "1811" @default.
- W2158012362 abstract "The recent progress in ferroelectricity and antiferroelectricity in HfO2-based thin films is reported. Most ferroelectric thin film research focuses on perovskite structure materials, such as Pb(Zr,Ti)O3, BaTiO3, and SrBi2Ta2O9, which are considered to be feasible candidate materials for non-volatile semiconductor memory devices. However, these conventional ferroelectrics suffer from various problems including poor Si-compatibility, environmental issues related to Pb, large physical thickness, low resistance to hydrogen, and small bandgap. In 2011, ferroelectricity in Si-doped HfO2 thin films was first reported. Various dopants, such as Si, Zr, Al, Y, Gd, Sr, and La can induce ferroelectricity or antiferroelectricity in thin HfO2 films. They have large remanent polarization of up to 45 μC cm−2, and their coercive field (≈1–2 MV cm−1) is larger than conventional ferroelectric films by approximately one order of magnitude. Furthermore, they can be extremely thin (<10 nm) and have a large bandgap (>5 eV). These differences are believed to overcome the barriers of conventional ferroelectrics in memory applications, including ferroelectric field-effect-transistors and three-dimensional capacitors. Moreover, the coupling of electric and thermal properties of the antiferroelectric thin films is expected to be useful for various applications, including energy harvesting/storage, solid-state-cooling, and infrared sensors." @default.
- W2158012362 created "2016-06-24" @default.
- W2158012362 creator A5002092276 @default.
- W2158012362 creator A5003850300 @default.
- W2158012362 creator A5012807288 @default.
- W2158012362 creator A5015296818 @default.
- W2158012362 creator A5023007303 @default.
- W2158012362 creator A5025362825 @default.
- W2158012362 creator A5027075775 @default.
- W2158012362 creator A5031113156 @default.
- W2158012362 creator A5038909842 @default.
- W2158012362 creator A5074806474 @default.
- W2158012362 creator A5076649890 @default.
- W2158012362 date "2015-02-11" @default.
- W2158012362 modified "2023-10-14" @default.
- W2158012362 title "Ferroelectricity and Antiferroelectricity of Doped Thin HfO<sub>2</sub>-Based Films" @default.
- W2158012362 cites W1494215899 @default.
- W2158012362 cites W1535013153 @default.
- W2158012362 cites W1588530646 @default.
- W2158012362 cites W1607281462 @default.
- W2158012362 cites W1625170149 @default.
- W2158012362 cites W1628672899 @default.
- W2158012362 cites W1647406517 @default.
- W2158012362 cites W1658852484 @default.
- W2158012362 cites W1964056004 @default.
- W2158012362 cites W1965502119 @default.
- W2158012362 cites W1969300888 @default.
- W2158012362 cites W1976902828 @default.
- W2158012362 cites W1981338907 @default.
- W2158012362 cites W1982437645 @default.
- W2158012362 cites W1982643031 @default.
- W2158012362 cites W1983176018 @default.
- W2158012362 cites W1984956029 @default.
- W2158012362 cites W1985130467 @default.
- W2158012362 cites W1987265487 @default.
- W2158012362 cites W1987301919 @default.
- W2158012362 cites W1989081944 @default.
- W2158012362 cites W1989668680 @default.
- W2158012362 cites W1990324180 @default.
- W2158012362 cites W1991738800 @default.
- W2158012362 cites W1992513045 @default.
- W2158012362 cites W1994319933 @default.
- W2158012362 cites W1995362002 @default.
- W2158012362 cites W1995625631 @default.
- W2158012362 cites W1997779122 @default.
- W2158012362 cites W2001682737 @default.
- W2158012362 cites W2003774187 @default.
- W2158012362 cites W2004582443 @default.
- W2158012362 cites W2005458692 @default.
- W2158012362 cites W2005663284 @default.
- W2158012362 cites W2006091345 @default.
- W2158012362 cites W2007788562 @default.
- W2158012362 cites W2011987046 @default.
- W2158012362 cites W2012512650 @default.
- W2158012362 cites W2015318188 @default.
- W2158012362 cites W2015445221 @default.
- W2158012362 cites W2018452678 @default.
- W2158012362 cites W2030237677 @default.
- W2158012362 cites W2039824868 @default.
- W2158012362 cites W2041521961 @default.
- W2158012362 cites W2041742028 @default.
- W2158012362 cites W2042314829 @default.
- W2158012362 cites W2042834133 @default.
- W2158012362 cites W2047372568 @default.
- W2158012362 cites W2047790392 @default.
- W2158012362 cites W2048040049 @default.
- W2158012362 cites W2049177906 @default.
- W2158012362 cites W2049301388 @default.
- W2158012362 cites W2051249794 @default.
- W2158012362 cites W2051982774 @default.
- W2158012362 cites W2057838896 @default.
- W2158012362 cites W2064190383 @default.
- W2158012362 cites W2066061312 @default.
- W2158012362 cites W2069261563 @default.
- W2158012362 cites W2069409276 @default.
- W2158012362 cites W2070882565 @default.
- W2158012362 cites W2071261094 @default.
- W2158012362 cites W2073573363 @default.
- W2158012362 cites W2075335925 @default.
- W2158012362 cites W2076972388 @default.
- W2158012362 cites W2078391136 @default.
- W2158012362 cites W2080605854 @default.
- W2158012362 cites W2081610269 @default.
- W2158012362 cites W2085867935 @default.
- W2158012362 cites W2086307783 @default.
- W2158012362 cites W2086364962 @default.
- W2158012362 cites W2087436033 @default.
- W2158012362 cites W2087757714 @default.
- W2158012362 cites W2091811066 @default.
- W2158012362 cites W2092582752 @default.
- W2158012362 cites W2094675998 @default.
- W2158012362 cites W2099834391 @default.
- W2158012362 cites W2103059205 @default.
- W2158012362 cites W2109143917 @default.
- W2158012362 cites W2116638530 @default.
- W2158012362 cites W2118507765 @default.
- W2158012362 cites W2119033937 @default.
- W2158012362 cites W2119660843 @default.