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• W2158118780 abstract "The importance of silicon nitride (Si3N4) prepared by the chemical vapor deposition (C VD) technique is discussed briefly. A computer code was used to calculate CVD phase diagrams useful for the preparation of this material. Theoretical deposition efficiencies and gaseous phase compositions are also reported. The reactants include NH3/SiH4, NH3/SiH2Cl2, NH3/SiCl4, and NH3/SiF4. The effect of N2, H2, and Ar additions, as well as the system pressure, are evaluated. The results are compared with experimental data from the literature." @default.
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• W2158118780 date "1983-08-01" @default.
• W2158118780 modified "2023-09-23" @default.
• W2158118780 title "Thermodynamic Calculations for the Chemical Vapor Deposition of Silicon Nitride" @default.
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• W2158118780 doi "https://doi.org/10.1111/j.1151-2916.1983.tb10090.x" @default.
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