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- W2158156621 abstract "The electrical injection in porous silicon fabricated with heavily doped p-type silicon is very sensitive to NO2. The known effect is an injection increase associated to NO2. We show experimentally a strong correlation between two structural properties and the sensitivity of electrical injection to NO2. The first property is the microstructure, i.e. the pore morphology at nm scale. A structure with straight, elongated pores shows large sensitivity, as opposed to a branching structure. The second property is the layer thickness, which determines the sign of the effect of NO2. If the thickness is sufficiently low – of the order of few µm – the injection in presence of NO2 decreases, instead of increasing. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W2158156621 date "2005-06-01" @default.
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- W2158156621 title "Role of microstructure and layer thickness in porous silicon conductometric gas sensors" @default.
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- W2158156621 doi "https://doi.org/10.1002/pssa.200461138" @default.
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