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- W2158236644 abstract "GaN based FET structures offer the potential of high speed, high power and high temperature operation beyond that of GaAs based FET devices, which have been operated up to 500°C. Here, operation of a Si-doped channel AlGaN-GaN HFET up to 750°C in vacuum is evaluated. Specifically, three parts of the device structure were evaluated: (a) the Schottky contact, (b) the active channel region with its channel sheet charge, and (c) the buffer layer." @default.
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- W2158236644 date "2002-11-27" @default.
- W2158236644 modified "2023-09-27" @default.
- W2158236644 title "Evaluation of AlGaN-GaN HFETs up to 750°C" @default.
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- W2158236644 doi "https://doi.org/10.1109/drc.1998.731144" @default.
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