Matches in SemOpenAlex for { <https://semopenalex.org/work/W2158332208> ?p ?o ?g. }
- W2158332208 abstract "In this work we present recent results on the direct heterogeneous integration of GaN HEMTs and Si CMOS on a silicon substrate. GaN HEMTs whose DC and RF performance are comparable to GaN HEMTs on SiC substrates have been achieved. As a demonstration vehicle we designed and fabricated a GaN amplifier with pMOS gate bias control circuitry (a current mirror) and heterogeneous interconnects. This simple demonstration circuit is a building block for more advanced RF, mixed signal and power conditioning circuits, such as reconfigurable or linearized PAs with in-situ adaptive bias control, high power digital-to-analog converters (DACs), driver stages for on-wafer optoelectronics, and on-chip power distribution networks." @default.
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- W2158332208 date "2011-10-01" @default.
- W2158332208 modified "2023-10-16" @default.
- W2158332208 title "High Performance Mixed Signal and RF Circuits Enabled by the Direct Monolithic Heterogeneous Integration of GaN HEMTs and Si CMOS on a Silicon Substrate" @default.
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- W2158332208 doi "https://doi.org/10.1109/csics.2011.6062443" @default.
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