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• W2158799428 abstract "The case of thick metallic layers on semiconductors is first treated to understand the origin of an eventual pinning of the Fermi level. The notion of metal induced gap states is precised and related to resonant dangling bond states. After having summarized simple rules governing the relaxation and reconstruction on free surfaces the formation of the interface is investigated for alkali and noble metals on GaAs(110). Calculations in the submonolayer range are discussed. The influence of correlation effects is examined and it is shown that a negative U situation is most likely to occur. The results of low temperature formation are also interpreted in some detail as well as the onset of metallization." @default.
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• W2158799428 date "1993-03-01" @default.
• W2158799428 modified "2023-09-25" @default.
• W2158799428 title "Theory of the formation of Schottky barriers" @default.
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• W2158799428 doi "https://doi.org/10.1016/0169-4332(93)90738-w" @default.
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