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- W2159109798 abstract "physica status solidi (a)Volume 113, Issue 2 p. K267-K271 Device-Related Phenomena Modeling the two-dimensional emitter-base and base-collector juction capacitances of bipolar junction transistors J. J. Liou, J. J. Liou Electrical Engineering Department, University of Central Florida, Orlando Search for more papers by this authorA. Whittaker, A. Whittaker Electrical Engineering Department, University of Central Florida, Orlando Search for more papers by this authorJ. S. Yuan, J. S. Yuan Texas Instruments, Houston Search for more papers by this author J. J. Liou, J. J. Liou Electrical Engineering Department, University of Central Florida, Orlando Search for more papers by this authorA. Whittaker, A. Whittaker Electrical Engineering Department, University of Central Florida, Orlando Search for more papers by this authorJ. S. Yuan, J. S. Yuan Texas Instruments, Houston Search for more papers by this author First published: 16 June 1989 https://doi.org/10.1002/pssa.2211130278 Orlando, Florida 32816, USA. P.O.B. 1443, MS657, Houston, Texas 77001, USA. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Volume113, Issue216 June 1989Pages K267-K271 RelatedInformation" @default.
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- W2159109798 title "Modeling the two-dimensional emitter-base and base-collector juction capacitances of bipolar junction transistors" @default.
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