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• W2159225512 abstract "We present new experimental results about channel hot carrier degradation of enclosed layout transistors as a function of previous accumulated total ionizing dose, stress temperature, and transistor geometry. We show that the parametric degradation follows a power law, whose exponent is higher than in conventional open layout transistors, possibly due to a different diffusion geometry of hydrogen. Through physical simulation we attribute this effect to the electric field at the device corners, which leads to a non-uniform impact ionization. Previous irradiation reduces the channel hot carrier degradation in MOSFETs with 5.2-nm gate oxide, while having a minor influence with 2.2-nm gate dielectric." @default.
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• W2159225512 date "2008-12-01" @default.
• W2159225512 modified "2023-10-15" @default.
• W2159225512 title "Degradation Induced by X-Ray Irradiation and Channel Hot Carrier Stresses in 130-nm NMOSFETs With Enclosed Layout" @default.
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• W2159225512 doi "https://doi.org/10.1109/tns.2008.2006747" @default.
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