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- W2159406146 abstract "Recent studies of Lim <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>et</i> <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>al.</i> have shown that channel engineering can effectively be used to globally improve the device noise performance. This happens because the doping profile can strongly impact the correlation between the drain and induced gate noise. In this brief, we will use the theory developed in the recent works of Roy <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>et</i> <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>al.</i> to provide a physical understanding and insight on the behavior of the gate-drain correlation coefficient, which will be very useful for understanding the mechanism by which the doping profile impacts the RF noise performance of a MOSFET." @default.
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- W2159406146 date "2008-08-01" @default.
- W2159406146 modified "2023-09-30" @default.
- W2159406146 title "Impact of Lateral Asymmetry of MOSFETs on the Gate–Drain Noise Correlation" @default.
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- W2159406146 doi "https://doi.org/10.1109/ted.2008.925935" @default.
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