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- W2159441249 abstract "This paper uses finite element design for optimization of piezoresistive silicon covered SiO2 microbridges. Resistance changes of the microbridge due to the surface stress changes were systematically investigated by varying Si piezoresistor geometries and the boron doping concentrations in silicon. Our simulation results show that the resistance change of the microbridge is directly related to the arcuation of the microbridges and a better ΔR/R response can be obtained with a thinner and narrower silicon piezoresistor. However, the S/N ratio was not significantly affected by the SiO2 dimensions. A fabrication process of silicon covered SiO2 microbridges is also reported." @default.
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- W2159441249 date "2006-03-06" @default.
- W2159441249 modified "2023-10-16" @default.
- W2159441249 title "Simulation and fabrication of SiO2-based piezoresistive microbridges for chem/biosensors" @default.
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- W2159441249 doi "https://doi.org/10.1088/0960-1317/16/4/004" @default.
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