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• W2159709160 abstract "High-current effects in InGaP/GaAs heterojunction bipolar transistors (HBTs) were modeled and characterized. In addition to the self-heating effect, high currents were found to degrade large-signal performance mainly through Kirk and quasi-saturation effects. New formalisms in terms of base transit time and base-collector diffusion capacitance were used to modify the conventional Gummel-Poon model. This new model was verified against large-signal characteristics measured at 2 GHz. The validity of the new model for HBTs of different emitter geometry was also explored." @default.
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• W2159709160 date "2002-04-01" @default.
• W2159709160 modified "2023-09-24" @default.
• W2159709160 title "Large-signal modeling and characterization of high-current effects in InGaP/GaAs HBTs" @default.
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• W2159709160 doi "https://doi.org/10.1109/22.993410" @default.
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