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• W2159747117 abstract "We present a method of coupling drift-diffusion simulations with quantum transmitting boundary method (QTBM) tunnel current calculations. This allows self-consistent simulation of thin oxide devices in which large tunnel currents can flow. Simulated results are presented for a thin oxide Al/SiO/sub 2//Si structure and an Al/SiO/sub 2//n-Si/p-Si tunnel switching diode. We demonstrate the careful use of the recombination lifetime as an adjustable or relaxable parameter in order to obtain converging solutions." @default.
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• W2159747117 date "2000-05-01" @default.
• W2159747117 modified "2023-09-27" @default.
• W2159747117 title "Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode" @default.
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• W2159747117 doi "https://doi.org/10.1109/16.841240" @default.
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