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- W2160175157 abstract "A new, rugged 100 V power MOSFET of the OptiMOStrade 2-family is described. By applying compensation principles, a device technology was developed that combines low on-state resistance R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</sub> with outstanding switching properties. The technology also offers a small gate charge Q <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> and a small gate resistance R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> . In addition, the internal body diode, when acting as freewheeling diode, reveals a soft reverse-recovery with a small reverse-recovery charge Q <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>RR</sub> . Therefore, the technology is particularly suitable for a variety of applications, including highly efficient DC-DC and AC-DC converters, telecommunication and server topologies, Class-D amplifiers, and motor control" @default.
- W2160175157 created "2016-06-24" @default.
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- W2160175157 date "2006-08-01" @default.
- W2160175157 modified "2023-09-27" @default.
- W2160175157 title "A New Fast and Rugged 100 V Power MOSFET" @default.
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- W2160175157 doi "https://doi.org/10.1109/epepemc.2006.4778371" @default.
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