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- W2160277573 abstract "Infrared attenuated total reflection spectroscopy has been used to observe the surface chemistry of films (grown on Si by low-pressure chemical vapor deposition) under steady-state conditions during exposure to dilute aqueous HF solutions. Surfaces etched in HF do not exhibit rapid growth of an layer when subsequently exposed to either humid room air at room temperature or to liquid However, some evidence is found for the formation of an ultrathin oxide-like layer when the etched surface is rinsed in deionized Removal of this layer in HF results in no detectable signal in the Si-H stretching region, unlike the case for Si subjected to a similar oxide-removal treatment. The presence of SiOH groups has been detected by observing their removal by reaction with aqueous acetic acid or HCl solutions, which suggests that groups are rapidly hydrolyzed. An attempt was made to detect surface groups by protonation in aqueous acid to form which should be more readily observable in the infrared spectrum. However, the surface coverage of if any, is too small to be detected by this means. © 2005 The Electrochemical Society. All rights reserved." @default.
- W2160277573 created "2016-06-24" @default.
- W2160277573 creator A5084431581 @default.
- W2160277573 date "2005-01-01" @default.
- W2160277573 modified "2023-09-25" @default.
- W2160277573 title "Wet-Chemical Treatment of Si[sub 3]N[sub 4] Surfaces Studied Using Infrared Attenuated Total Reflection Spectroscopy" @default.
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- W2160277573 doi "https://doi.org/10.1149/1.1851056" @default.
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