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- W2160476411 abstract "The details of solid-phase-epitaxial (SPE) growth are obtained in ion-implanted silicon amorphous layers after furnace annealing in the temperature range 450 to 600°C. The kinetics of amorphous-crystalline interfaces and the nature of residual damage in SPE grown layers are studied by high-resolution, cross-section electron microscopy. The number density of dislocation loops in the dislocation bands below the amorphous layers in as-implanted specimens are found to decrease with decreasing substrate temperature and increasing mass of the incident ions. Substitutional concentrations of solutes in “defect-free” SPE grown layers are found to exceed retrograde solubility limits as much as a factor of 560 in Si–Bi system. Depending upon implantation conditions, the observed substitutional concentrations of antimony in silicon vary from (1.3 to 2.5) × 1021 cm−3 compared to retrograde solubility limit of 7.0 × 1019 cm−3. These observations are found to be in good agreement with the theoretical estimates of maximum concentrations. The solute concentrations in the excess of solubility limits can be precipitated out by heat treatments at relatively higher temperatures. Die Details des epitaktischen Festphasenwachstums (SPE) werden in amorphen ionenimplantierten Schichten nach Ofentemperung im Temperaturbereich von 450 bis 600°C untersucht. Die Kinetik der Grenzfläche amorph-kristallin und die Art des Reststrahlenschadens in SPE-Schichten werden mittels Hochauflösungs-Querschnittselektronenmikroskopie untersucht. Die Dichte der Versetzungsschleifen in den Versetzungsbändern unterhalb der amorphen Schichten in unbehandelten implantierten Proben nimmt mit abnehmender Substrattemperatur und zunehmender Masse der eingeschossenen Ionen ab. Die substitutionellen Konzentrationen der gelösten Species in „defektfreien”︁ SPE-Schichten übersteigen die rückläufigen Löslichkeitsgrenzen um einen Faktor von 560 im Si–Bi-System. In Abhängigkeit von den Implantationsbedingungen variieren die beobachteten Substitutionskonzentrationen von Antimon in Silizium von (1,3 bis 2.5) × 1021 cm−3 im Vergleich zur rückläufigen Löslichkeitsgrenze von 7,0 × 1019 cm−3. Es wird gefunden, daß diese Beobachtungen in guter Übereinstimmung mit theoretischen Berechnungen der Maximalkonzentrationen sind. Die Lösungskonzentrationen im Überschußbereich der Löslichkeitsgrenzen können bei Wärmebehandlungen bei relativ hohen Temperaturen ausfällen." @default.
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- W2160476411 date "1982-09-16" @default.
- W2160476411 modified "2023-09-23" @default.
- W2160476411 title "Solid-Phase-Epitaxial Growth in Ion-Implanted Silicon" @default.
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- W2160476411 doi "https://doi.org/10.1002/pssa.2210730129" @default.
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