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• W2160683415 abstract "The interaction of unexcited, molecular oxygen with cleaved InAs(1 1 0) surfaces was investigated at room temperature by using a Kelvin probe and photoemission spectroscopy excited by HeI radiation. Exposures up to 105 L of O2, which result in an oxygen uptake up to only a few percent of a monolayer, cause the formation of an inversion layer on the specimen doped p-type and of an accumulation layer on those doped n-type. Between 105 and 108 L of O2 the Fermi level is found to be pinned at 0.13 eV above the bottom of the conduction band on samples doped p- as well as n-type. This energy position of the Fermi level agrees with the charge- neutrality level of the virtual gap states as calculated by Tersoff. Since the ionization energy remains unchanged up to exposures of 108 L of O2 it is concluded that the oxygen is incorporated into rather than adsorbed on cleaved InAs surfaces." @default.
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• W2160683415 date "1986-05-01" @default.
• W2160683415 modified "2023-09-23" @default.
• W2160683415 title "Oxidation of cleaved InAs(1 1 0) surfaces at room temperature: Surface band-bending and ionization energy" @default.
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• W2160683415 doi "https://doi.org/10.1016/0038-1098(86)90094-3" @default.
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