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- W2160724014 abstract "By using HfAlO as a capping layer on SiON, MoN/HfAlO/SiON p-MOSFETs show an effective work function of 5.1 eV, a low threshold voltage of -0.1 V, and a peak hole mobility of 80 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /(Vmiddots) at small equivalent oxide thickness of 0.85 nm. These self-aligned and gate-first p-MOSFETs processes, with standard ion implantation and 1000degC rapid thermal annealing, are fully compatible with current very large scale integration fabrication lines." @default.
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- W2160724014 date "2009-08-01" @default.
- W2160724014 modified "2023-10-17" @default.
- W2160724014 title "Low-Threshold-Voltage MoN/HfAlO/SiON p-MOSFETs With 0.85-nm EOT" @default.
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- W2160724014 doi "https://doi.org/10.1109/led.2009.2023824" @default.
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