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- W2160862315 abstract "Abstract : A systematic investigation of the InyGa1-yAs/Al0.15Ga0.85 As pseudomorphic MODFET has revealed an optimum InAs mole fraction of 0.15 or = y or = 0.20. Meanwhile, continuing studies of the InGaAs/GaAs strained layer MQW by optical transmission and photoreflectance have displayed sharp spectral features, revealing the excellent optical quality of the samples. With good agreement between the measured spectra and our band structure model, an increased understanding of the InGa/GaAs MQW structures into p-i-n optical modulators, large 27% changes in transmission have been reported. Operating this MQW electroabsorption optical modulator as a Self-Electrooptic Effect Device, we have reported the first demonstration of this device in the InGaAs material system." @default.
- W2160862315 created "2016-06-24" @default.
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- W2160862315 date "1988-03-08" @default.
- W2160862315 modified "2023-09-25" @default.
- W2160862315 title "III-V Heterojunction Structures and High Speed Devices" @default.
- W2160862315 doi "https://doi.org/10.21236/ada195464" @default.
- W2160862315 hasPublicationYear "1988" @default.
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