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- W2161007310 abstract "The aim of this paper is to investigate the impact of gate-length (L <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>g</sub> ) and doping concentration (N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>d</sub> ) of the donor layer and its thickness (d <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>a</sub> ) on the performance of double-gate (DG) InAlAs/InGaAs/InP HEMT. A comparison of the impact of donor-layer doping concentration, donor-layer thickness and gate-length on the channel current, transconductance, gate-to-source capacitance and cut-off frequency for the DG-HEMT has been studied with that for SG-HEMT. As a result of this comparison the DG-HEMT has been seen to exhibit more sensitivity to these device parameters. This is due to greater sheet-carrier concentration and better gate-control. Thus, the optimization of the donor-layer doping, donor-layer thickness and gate-length in the case of DG-HEMT is crucial." @default.
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- W2161007310 date "2010-11-01" @default.
- W2161007310 modified "2023-10-13" @default.
- W2161007310 title "Impact of doping concentration and donor-layer thickness on the dc characterization of symmetric double-gate and single-gate InAlAs/InGaAs/InP HEMT for nanometer gate dimension-A comparison" @default.
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- W2161007310 doi "https://doi.org/10.1109/tencon.2010.5685856" @default.
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