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• W2161055998 abstract "In this study, low pressure metal-organic chemical vapour deposition was used, accompanied by 488 nm argon ion laser irradiation, to study the growth of ZnSe epilayers. With laser irradiation, a faster growth rate was obtained and the crystallinity was improved. Better optical properties appeared when the growth temperature was below 400/spl deg/C. The influence of the laser power density was examined between 0 and 0.2 W/cm/sup 2/ at a growth temperature of 350/spl deg/C. The growth rate and quality improved with increasing laser density." @default.
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• W2161055998 date "2002-12-24" @default.
• W2161055998 modified "2023-09-25" @default.
• W2161055998 title "ZnSe growth by ion laser-assisted metalorganic chemical vapor deposition" @default.
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• W2161055998 doi "https://doi.org/10.1109/smelec.1996.616462" @default.
• W2161055998 hasPublicationYear "2002" @default.
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