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• W2161246214 abstract "In high-power density power converter designs, power losses of power devices are essential design parameters. Silicon-carbide (SiC) power devices are expected as next generation power devices due to their superior performances compared to conventional silicon (Si) power devices. The power loss performances of a SiC power module using SiC Implantation and Epitaxial MOSFET (SiC-IEMOSFET) and Junction barrier controlled Schottky Diode (SiC-JBS) has been evaluated based on parameters of the junction temperature, current density, and switching frequency. The advantage of the SiC power module compared to a latest Si-IGBT and SiC-diode hybrid-pair module are discussed from the view point of the power loss reduction." @default.
• W2161246214 created "2016-06-24" @default.
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• W2161246214 date "2010-02-01" @default.
• W2161246214 modified "2023-09-26" @default.
• W2161246214 title "Evaluation of a SiC power module using low-on-resistance IEMOSFET and JBS for high power density power converters" @default.
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• W2161246214 doi "https://doi.org/10.1109/apec.2010.5433514" @default.
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