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• W2161251808 abstract "The parasitic bipolar amplification in MOS/SOI transistors determines the SEU sensitivity of actual devices. This response is experimentally measured in a set of single transistors using a focused picosecond laser with submicrometer spatial resolution. This technique, validated by comparing the SEU behavior of registers irradiated with both laser and heavy ions, is relevant for both device physics and hardness assurance applications." @default.
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• W2161251808 date "2000-12-01" @default.
• W2161251808 modified "2023-09-30" @default.
• W2161251808 title "Laser probing of bipolar amplification in 0.25-/spl mu/m MOS/SOI transistors" @default.
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• W2161251808 doi "https://doi.org/10.1109/23.903753" @default.
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