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- W2161432495 abstract "The authors report the formation of an interfacial misfit (IMF) array in the growth of relaxed GaAs bulk layers on a (001) GaSb surface. Under specific conditions, the high quality IMF array has a period of 5.6nm and can accommodate the 7.78% tensile GaAs∕GaSb lattice mismatch. The misfit site is identified as a 90° edge dislocation using Burger’s circuit theory and confirmed by high-resolution cross-section transmission electron microscopy (TEM) images. The resulting GaAs bulk material is both strain-free and highly crystalline. Plan-view TEM images show threading dislocation density of ∼3×106∕cm2. This material demonstration will enable novel device structures including an embedded GaSb active region in GaAs device matrix." @default.
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- W2161432495 date "2007-04-16" @default.
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- W2161432495 title "Epitaxial growth and formation of interfacial misfit array for tensile GaAs on GaSb" @default.
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- W2161432495 doi "https://doi.org/10.1063/1.2723649" @default.
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