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- W2161516429 abstract "After implantation, the distribution of ions can be described by analytical functions with parameters depending on implantation conditions. In this work, a calibrated Monte Carlo simulator was used to calculate tables for the implantation of B, BF <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> , P, As, In and Sb. Starting from systematic Monte Carlo data we extracted the parameters of two Pearson functions for dopant profiles in crystalline silicon and single Pearson functions for profiles in SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> , Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> and poly-silicon. The new tables cover more dopant species and implantation conditions than existing implantation tables and provide excellent agreement with 90 SIMS profiles. In a 2D nMOS test case, the implantation simulation with the new tables provides the same accuracy as Monte Carlo simulations." @default.
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- W2161516429 date "2002-01-01" @default.
- W2161516429 modified "2023-10-17" @default.
- W2161516429 title "New implantation tables for B, BF<sub>2</sub>, P, As, In and Sb" @default.
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- W2161516429 doi "https://doi.org/10.1109/iit.2002.1258068" @default.
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