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- W2162178472 abstract "This paper is the first to provide a comprehensive study on the layout dependence of scaled Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> Ge <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> -channel pFETs. Drive current enhancement up to 90% is demonstrated for Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.55</sub> Ge <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.45</sub> -channel pFETs with L <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> = 35 nm and EOT = 0.9 nm when the transistor width (W) is scaled from 10 μm to 110 nm. This is attributed to a change in channel stress from biaxial compressive at large W to the more beneficial longitudinal uniaxial compressive stress at narrow W. These results are confirmed by both Nano-Beam Diffraction and TCAD analysis. Moreover, L <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> = 35 nm Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.55</sub> Ge <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.45</sub> pFETs show 20% linear current enhancement for Length-Of-Diffusion (LOD) scaling below 200 nm. Both W- and LOD-scaling work favorably for Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> Ge <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> pFETs, as a consequence they are excellent candidates to be used in future HP CMOS technologies." @default.
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- W2162178472 date "2010-06-01" @default.
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- W2162178472 title "High-mobility Si<inf>1−x</inf>Ge<inf>x</inf>-channel PFETs: Layout dependence and enhanced scalability, demonstrating 90% performance boost at narrow widths" @default.
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- W2162178472 doi "https://doi.org/10.1109/vlsit.2010.5556128" @default.
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