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• W2162225315 abstract "GaN/SiC heterojunctions can improve the performance considerably for BJTs and FETs. In this work, heterojunction diodes have been manufactured and characterized. The fabricated diodes have a GaN n-type cathode region on top of a 4H-SiC p-type epi layer. The GaN layer was grown with HVPE directly on off-axis SIC without a buffer layer. Mesa structures were formed and a Ti metallization was used as cathode contact to GaN, and the anode contact was deposited on the backside using sputtered Al. Both current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed on the diode structures. The ideality factor of the measured diodes was 1.1 and was constant with temperature. A built in potential of 2.06 V was extracted from I-V measurements and agrees well with the built in potential from C-V measurements. The conduction band offset was extracted to 1.1 eV and the heterojunction was of type II. The turn on voltage for the diodes is about 1 V lower than expected and a suggested mechanism for this effect is discussed." @default.
• W2162225315 created "2016-06-24" @default.
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• W2162225315 date "2001-03-01" @default.
• W2162225315 modified "2023-09-23" @default.
• W2162225315 title "Fabrication and characterization of heterojunction diodes with HVPE-grown GaN on 4H-SiC" @default.
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• W2162225315 doi "https://doi.org/10.1109/16.906434" @default.
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