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• W2162470823 abstract "Degradation of amorphous silicon thin-film transistors under negative gate bias stresses is systematically investigated. It is found that both state creation and hole trapping contribute to device threshold voltage <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</sub> shifts. For direct-current stresses, state creation dominates in low-stress amplitude conditions, whereas hole trapping could dominate the second-stage degradation in high-stress amplitude conditions. For alternating-current stresses, it is found that domination of state creation or hole trapping mechanisms depends on stress frequency <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>f</i> , temperature, amplitude, and stress time. As a result, different turnaround phenomena of <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</sub> degradation are observed. Both state creation and hole trapping mechanisms are enhanced by higher stress temperatures and amplitudes. Based on an <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>RC</i> delay model, both <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>f</i> - and duty-ratio-dependent degradation under low- <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>f</i> stress conditions can be understood, whereas a recovery phenomenon under high- <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>f</i> stress conditions can be explained by the hole trapping/emission mechanism. Device leakage current <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>I</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>off</sub> decreases under low- <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>f</i> stress but increases under high- <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>f</i> stress. State creation is considered responsible for the <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>I</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>off</sub> reduction, whereas hole injection is considered responsible for the <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>I</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>off</sub> increase." @default.
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• W2162470823 date "2011-10-01" @default.
• W2162470823 modified "2023-10-03" @default.
• W2162470823 title "Degradation of Amorphous Silicon Thin Film Transistors Under Negative Gate Bias Stress" @default.
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