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- W2162823908 abstract "An urgent need exists for non-destructive methods of analysis which can provide information on the quantitative depth-distribution of impurities in semiconductors, including the ion-implanted impurity redistribution after the annealing processes. A proposal for using electron probe X-ray microanalysis is presented in this work. The advantage of this approach is demonstrated by analysis of Si-specimens with ion-implanted P and As. A part of the specimens has been annealed. The method is based on measurements of X-ray intensities of impurities at three values of primary electron energy E 0. Gaussian distributions were used as an approximation for ion-implanted profiles. A two-parameter fitting procedure has been developed for the determination of Gaussian parameters before and after annealing, which give minimal differences between the experimental and the calculated X-ray intensities at different E 0. The results, obtained, show good agreement with depth profiles from Auger electron spectroscopy and secondary ion mass-spectrometry. The proposed approach may be suitable for the quick control locally of thermal processes in semiconductor technology and for the calibration of ion-implanted reference materials." @default.
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- W2162823908 date "1992-01-01" @default.
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- W2162823908 title "Non-Destructive Determination of Ion-Implanted Impurity Distribution in Silicon by EPMA" @default.
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- W2162823908 doi "https://doi.org/10.1007/978-3-7091-6679-6_24" @default.
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