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• W2163043246 endingPage "063038" @default.
• W2163043246 startingPage "063038" @default.
• W2163043246 abstract "In this study, we investigate the kinetically driven dewetting of ultra-thin silicon films on silicon oxide substrate under ultra-high vacuum, at temperatures where oxide desorption and silicon lost could be ruled out. We show that in ultra-clean experimental conditions, the three different regimes of dewetting, namely (i) nucleation of holes, (ii) film retraction and (iii) coalescence of holes, can be quantitatively measured as a function of temperature, time and thickness. For a nominal flat clean sample these three regimes co-exist during the film retraction until complete dewetting. To discriminate their roles in the kinetics of dewetting, we have compared the dewetting evolution of flat unpatterned crystalline silicon layers (homogeneous dewetting), patterned crystalline silicon layers (heterogeneous dewetting) and amorphous silicon layers (crystallization-induced dewetting). The first regime (nucleation) is described by a breaking time which follows an exponential evolution with temperature with an activation energy EH ∼ 3.2 eV. The second regime (retraction) is controlled by surface diffusion of matter from the edges of the holes. It involves a very fast redistribution of matter onto the flat Si layer, which prevents the formation of a rim on the edges of the holes during both heterogeneous and homogeneous dewetting. The time evolution of the linear dewetting front measured during heterogeneous dewetting follows a characteristic power law x ∼ t0.45 consistent with a surface diffusion-limited mechanism. It also evolves as x ∼ h−1 as expected from mass conservation in the absence of thickened rim. When the surface energy is isotropic (during dewetting of amorphous Si) the dynamics of dewetting is considerably modified: firstly, there is no measurable breaking time; secondly, the speed of dewetting is two orders of magnitude larger than for crystalline Si; and thirdly, the activation energy of dewetting is much smaller due to the different driving force, which is based on the crystallization and redistribution of matter around the crystalline nuclei. The third regime (coalescence) corresponds to the merging of the dewetted fronts and of the islands positioned along the edges of the holes. The dynamics of this regime is much slower since it requires overcoming an additional nucleation barrier, while the surface energy reduction is quite low (low decrease of the covered surface area)." @default.
• W2163043246 created "2016-06-24" @default.
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• W2163043246 date "2012-06-27" @default.
• W2163043246 modified "2023-10-18" @default.
• W2163043246 title "The kinetics of dewetting ultra-thin Si layers from silicon dioxide" @default.
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• W2163043246 doi "https://doi.org/10.1088/1367-2630/14/6/063038" @default.
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