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• W2163232825 abstract "Surface morphologies of the metal-organic chemical vapor deposition-grown p-GaN layers with and without Si treatment were investigated by atomic force microscope and scanning electron microscope. It was found that Si treatment resulted in a much rougher sample surface due to the formation of a thin Si/sub x/N/sub y/ layer. It was also found that forward voltage of the Si-treated InGaN-GaN light-emitting diode (LED) was slightly higher than that of conventional LED without Si treatment. However, it was also found that such Si treatment could also result in a much larger LED output intensity." @default.
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• W2163232825 date "2005-08-01" @default.
• W2163232825 modified "2023-10-18" @default.
• W2163232825 title "InGaN-GaN MQW LEDs with Si treatment" @default.
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• W2163232825 doi "https://doi.org/10.1109/lpt.2005.851989" @default.
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